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Power Integrations’ SCALE-iDriver for SiC MOSFETs achieves AEC-Q100 automotive qualification


Power Integrations has announced that its SIC118xKQ SCALE-iDriver, a single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. The drivers, which include safety and protection features, can be configured to support gate-drive voltage requirements of commonly used SiC MOSFETs.

The SIC1182KQ (1,200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimized for driving SiC MOSFETs in automotive applications, exhibiting rail-to-rail output, fast gate switching speed, unipolar supply voltage supporting positive and negative output voltages, integrated power and voltage management and reinforced isolation.

Critical safety features include Drain to Source Voltage (VDS) monitoring, SENSE readout, primary and secondary Undervoltage Lock-out (UVLO), current-limited gate drive and Advanced Active Clamping (AAC), which facilitates safe operation and soft turn-off under fault conditions. AAC in combination with VDS monitoring ensures safe turn-off in less than 2 µs during short-circuit conditions. Gate-drive control and AAC features allow gate resistance to be minimized; this reduces switching losses, maximizing inverter efficiency.

Michael Hornkamp, Power Integrations’ Director of Marketing, said, “Silicon carbide MOSFET technology opens the door for smaller, lighter automotive inverter systems. Switching speeds and operating frequencies are increasing; our low gate resistor values maintain switching efficiency, while our fast short-circuit response quickly protects the system in the event of a fault.”

Source: Power Integrations